Growth of Pb(Zr, Ti)O_3 Thin Films by Photoenhanced Chemical Vapor Deposition and Their Properties
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概要
- 論文の詳細を見る
Pb(Zr,Ti)O_3 thin films were grown by photoenhanced chemical vapor deposition (CVD) using Pb(C_2H_5)_4, Zr(O-t-C_4H_9)_4, Ti(O-i-C_3H_7)_4 and O_2. Two types of perovskite Pb(Zr, Ti)O_3 films (tetragonal films and rhombohedral films) were successfully obtained at 600-635℃ by controlling the carrier flow ratio of the Zr source to Ti source. The Zr/Ti flow ratio also affected the growth rate, composition and electrical properties of films. In this study, it was proven that significant increases in both growth rate and Zr/Ti compositional ratio were caused by photoirradiation. Dielectric and ferroelectric properties, switching characteristics and I-V characteristics of the obtained Pb(Zr, Ti)O_3 films were also described in detail.
- 社団法人応用物理学会の論文
- 1992-09-30
著者
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Shiosaki Tadashi
Research Development Division Sakai Chemical Industry Co. Ltd.
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Shiosaki Tadashi
Department Of Electrical Engineering Ii Faculty Of Engineering Kyoto University
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Katayama T
Precision & Intelligence Laboratory Tokyo Institute Of Technology
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KATAYAMA Takuma
Department of Applied Chemistry, Faculty of Science, Tokyo University of Science
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Shimizu Masaru
Department Of Chemical Engineering Tokyo University Of Agriculture And Technology
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SUGIYAMA Masataka
Department of Electronics, Faculty of Engineering, Kyoto University
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Shimizu Masaru
Department Of Chemical Engineering Faculty Of Engineering Tokyo University Of Agriculture And Techno
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Katayama Takuma
Department Of Applied Chemistry Faculty Of Science Tokyo University Of Science
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