Studies on Dark and Photo Conductivities of Poly[2-methoxy, 5-(2'-ethylhexyl-oxy)-p-phenylene vinylene]:C_<60> Thin Films
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概要
- 論文の詳細を見る
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2003-04-30
著者
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SOGA Tetsuo
Nagoya Institute of Technology
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Mieno Tetsu
Department Of Physics Shizuoka University
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Mieno Tetsu
Department Of Physics Faculty Of Science Shizuoka University
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DAMODARE Laxmikant
Satellite Venture Business Laboratory, Shizuoka University
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Soga T
Nagoya Inst. Technol. Nagoya Jpn
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Damodare Laxmikant
Satellite Venture Business Laboratory Shizuoka University
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Mieno T
Department Of Physics Faculty Of Science Shizuoka University
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- Influence of Structure and C_ Composition on Properties of Blends and Bilayers of Organic Donor-Acceptor Polymer/C_ Photovoltaic Devices
- Boron-Incorporated Amorphous Carbon Films Deposited by Pulsed Laser Deposition : Semiconductors
- Fabrication of a TiO_2-Based Solid-State Cell with an Organic Polymer as a Sensitizer : Optical Properties of Condensed Matter
- Effect of Radio Frequency Power on the Properties of Hydrogenated Amorphous Carbon Films Grown by Radio Frequency Plasma-Enhanced Chemical Vapor Deposition
- Thermal Stress Relaxation in GaAs Layer on New Thin Si Layer over Porous Si Substrate Grown by Metalorganic Chemical Vapor Deposition
- The physical and micro structural properties of PECVD grown amorphous carbon films on the contribution to n-C:P/p-Si solar cells
- The annealing temperature effects on the synthesis of n-TiO_2/dye/p-CuI solid state solar cells
- 1 MeV electron irradiation effects on GaAs solar cell grown on Si substrate
- 1 MeV electron irradiation effects on GaAs solar cell grown on Si substrate
- 1 MeV electron irradiation effects on GaAs solar cell grown on Si substrate
- The Deposition of a-C : H Films by Pulsed Laser Ablation
- Characterization of Phosphorus-Doped Amorphous Carbon and Construction of n-Carbon/p-Silicon Heterojunction Solar Cells
- Photovoltaic Properties of Boron-Incorporated Amorphous Carbon on n-Si Heterojunction Grown by Radio Frequency Plasma-Enhanced Chemical Vapor Deposition Using Trimethylboron
- Production of Various Fullerenes by Arc Discharge under Repetitive Weak Gravitational Field
- Accumulation of Negative Ions in Hollow-Type Electron Cyclotron Resonance CF_4 Plasma Column
- Studies on Dark and Photo Conductivities of Poly[2-methoxy, 5-(2'-ethylhexyl-oxy)-p-phenylene vinylene]:C_ Thin Films
- Effective Production of Negative Ions around Magnetized CF_4 Plasma Column
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- FOREWORD
- GaAlAs/ GaAs TJS Lasers on Si Substrates Operating at Room Temperature Fabricated by MOCVD
- Selective MOCVD Growth of GaAs on Si Substrate with Superlattice Intermediate Layers
- Band Gap Energy and Stress of GaAs Grown on Si by MOCVD
- Deep Levels in GaAs Grown Using Superlattice Intermediate Layers on Si Substrates by MOCVD
- MOCVD Growth of GaAs_P_x (x=0-1) and Fabrication of GaAs_P_ LED on Si Substrate
- MOCVD Growth of GaAs_P_ on Si Substrate
- AlGaAs/GaAs DH Lasers on Si Substrates Grown Using Super Lattice Buffer Layers by MOCVD
- Mechnism of MOCVD Growth for GaAs and AlAs
- Solid Composition and Growth Rate of Ga_Al_xAs Grown Epitaxially by MOCVD
- Si-Fullerene Compounds Produced by Controlling Spatial Structure of an Arc-Discharge Plasma
- Stationary Double Layers in a Collisionless Magnetoplasma
- X-Ray Mask Technology Utilizing an Optical Stepper
- Negative Tone Dry Development of Si-Containing Resists by Laser Ablation
- X-Ray Lithography with a Wet-Silylated and Dry-Developed Resist
- New Dry Surface-Imaging Process for X-Ray Lithography
- X-ray Mask Technology utilizing an Optical Stepper : X-Ray Lithography
- Buckminsterfullerene II. Electron Density Profile of the C_60 Molecule Determined by the Convolution Theory
- Buckminsterfullerene I.. Production of Fullerenes C_60 and C_70
- Production of Carbon Clusters by Impact Reaction Using Light-Gas Gun in Experiment Modeling Asteroid Collision
- Passivation of Bulk and Surface Defects in GaAs Grown on Si Substrate by Radio Frequency Phosphine/Hydrogen Plasma Exposure : Semiconductors
- Analysis of Ion Species in Potassium-Fullerene Plasmas
- Neutralized, Collisionless, Surface Ionized Ion Beam Source
- Optimum Condition for Spatial Ion Cyclotron Resonance in a Multiple Magnetic Mirror Field
- Stress and Strain of GaAs on Si Grown by MOCVD Using Strained Superlattice Intermediate Layers and a Two-Step Growth Method
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- Effect of NaOCl-Polishing on Metal Organic Chemical Vapor Deposition grown GaAs Surface on Si Substrate by Spectroscopic Ellipsometry and Atomic Force Microscopy
- Time Variation of Plasma Properties in a Pulse-Time-Modulated Electron Cyclotron Resonance Discharge of Chlorine Gas
- Minimization of X-Ray Mask Distortion by Two-Dimensional Finite Element Method Simulation : Lithography Technology
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- Photoluminescence Studies of Hydrogen-Passivated Al_Ga_As Grown on Si Substrate by Metalorganic Chemical Vapor Deposition
- Effects of H Plasma Passivation on the Optical and Electrical Properties of GaAs-on-Si
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- Etch Pit Observation of GaP Growrn on Si Substrate by Metalorganic Chemical Vapor Deposition
- Characterization of Antiphase Domain in GaP on Misoriented (001) Si Substrate Grown by Metalorganic Chemical Vapor Deposition
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- Characterization and Improvement of GaAs Layers Grown on Si Using an Ultrathin a-Si Film as a Buffer Layer
- Investigation of Electrical and Optical Properties of Phosphine/Hydrogen-Plasma-Exposed In_Ga_P Grown on Si SubStrate : Semiconductors
- Electrical Characteristics of GaAs Bonded to Si Using SeS_2 Technique
- Hydrogen Plasma Passivation and Improvement of the Photovoltaic Properties of a GaAs Solar Cell Grown on Si Substrate
- A Modified Harmonic Oscillator Approximation Scheme for the Dielectric Constants of GaAs, InP and GaP
- Characterization of Strained GaP/Si Heterostructure by Spectroscopic Ellipsometry
- Synchrotron-Radiation-Induced Deposition of Etch-Protecting Film on Si in CF_4 Plasma
- Control of Hydrocarbon Radicals and Amorphous Carbon Film Deposition by Means of RF Whistler Wave Discharge
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- Al_xGa_As/Si (r=0-0.22) Tandem Solar Cells Grown by Metalorganic Chemical Vapor Deposition
- High Efficiency GaAs/Si Monolithic Three-Terminal Cascade Solar Cells Grown by Metal-Organic Chemical Vapor Deposition
- Experimental and Numerical Studies of Heat Convection in the Synthesis of Single-Walled Carbon Nanotubes by Arc Vaporization
- Anomalous Surface Deformation of Sapphire Clarified by 3D-FEM Simulation of the Nanoindentation
- Spatial Evolution of Ion Beams Passing through a Multiple Magnetic Mirror Field
- Initial Growth Mechanism for GaAs and GaP on Si Substrate by Metalorganic Chemical Vapor Deposition
- Surface and Bulk Passivation effect of GaAs grown on Si Substrates by SeS_2Treatment
- Fluorination of Fullerene Film by CF_4 Plasma
- Cyclotron Resonance Mass Spectrometry of Ionic Radicals in Magnetized CF_4 Plasma ( Plasma Processing)
- Effects of Gravity and Magnetic Field in Production of C_ by a DC Arc Discharge
- Self-Similar Flow and Related Phenomena of Plasmas around Obstacles
- Effects of Growth Temperature and V/III Ratio on MOCVD-Grown GaAs-on-Si
- Optical Absorption and Electrical Conductivity of Amorphous Carbon Thin Films from Camphor : A Natural Source
- Investigations of a Rapid Thermal Annealed Al_Ga_As/Si Structure
- Minority Carrier Properties of GaAs on Si Grown by Metalorganic Chemical Vapor Deposition
- Ionization of Buckminsterfullerene C_60 in a Noble Gas Plasma
- Gas Temperature Evolution of the Gravity-Free Gas Arc Discharge under a Parabolic Flight of Jet Plane
- Automatic Production of Buckminsterfullerenes by Use of an Arc Discharge in a Closed Chamber
- Tilt Deformation of Metalorganic Chemical Vapor Deposition Grown GaP on Si Substrate
- First Demonstration of Al_xGa_As/Si Monolithic Tandem Solar Cells Grown by Metalorganic Chemical Vapor Deposition
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- Stress-Free GaAs on Si by Laser Pulse Irradiation
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- Production of Single-Walled Carbon Nanotubes by Modified Arc Discharge Method
- Preparation of Oxygenated Fullerene Thin Film for Photoelectric Devices
- Radial Density Profiles of Fluorine Negative Ions and Electrons around a Magnetized String Plasma in CF4Gas
- Radial Diffusion of Negative Ions Produced by Magnetized String-Type CF4 Plasma
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