Synchrotron-Radiation-Induced Deposition of Etch-Protecting Film on Si in CF_4 Plasma

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概要

• 論文の詳細を見る
• 1996-02-01

著者

• SOGA Tetsuo

  Nagoya Institute of Technology

• Shao Chunlin

  Nagoya University Ccrast

• Morita Shinzo

  Nagoya Univ.

• Soga T

  Department Of Environmental Technology And Urban Planning Nagoya Institute Of Technology

• Inanami Ryoichi

  Nagoya University Ccrast

• Inanami Ryoichi

  Nagoya University

• Hattori Shuzo

  Nagoya Industrial Science Research Institute, Nagoya 464, Japan

• Hattori Shuzo

  Nagoya Industrial Science Research Institute

• Morita Shinzo

  Nagoya University Ccrast

関連論文

• Structural Comparison between Ge and GaAs Films Grown by Molecular Beam Epitaxy on Si Substrate : Short Note
• Studies on Dark and Photo Conductivities of Poly[2-methoxy, 5-(2'-ethylhexyl-oxy)-p-phenylene vinylene]:C_ Thin Films
• FOREWORD
• Diamond Synthesized at Room Temperature by Pulsed Laser Deposition in Vacuum
• Electron-Beam Assisted Inductively Coupled Plasma for Quarter-Micron Etching Processes (特集:11th International Conference on Gas Discharges and their Applications)
• Synchrotron-Radiation-Induced Deposition of Etch-Protecting Film on Si in CF_4 Plasma
• Cu Dispersed C-S Dielectric Thin Film
• Anomalous Surface Deformation of Sapphire Clarified by 3D-FEM Simulation of the Nanoindentation
• Effects of Growth Temperature and V/III Ratio on MOCVD-Grown GaAs-on-Si
• Studies on Dark and Photo Conductivities of Poly[2-methoxy, 5-(2’-ethylhexyl-oxy)-p-phenylene vinylene]:C60 Thin Films

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