モンテカルロ法によるイオン化スパッタシミュレーション : 第1報,Cu埋め込み形状の再現(流体工学,流体機械)

概要

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In order to fabricate fine structures, film synthesis systems with excellent burial characteristics are required. One way of improving burial characteristics is to use ionization sputtering, in which sputtered atoms are ionized in flight and are then drawn to the wafer by an applied self-bias voltage. The Monte Carlo simulation of Cu ionization sputtering is performed. For ionization sputtering, it is important to understand the ionization of sputtered atoms in flight. The degree of ionization is calculated from the electron density and electron temperature, which are obtained through plasma simulations, and is used in the Monte Carlo simulation. In addition, the direction of Cu ions bent towards the substrate due to the sheath electric field, which is determined from the plasma simulation, is also used. These simulations successfully reproduce the shape of buried Cu films.
一般社団法人日本機械学会の論文
2004-01-25