モンテカルロ法によるイオン化スパッタシミュレーション : 第2報,ウエハ表面におけるCu原子・イオンの挙動の考慮(流体工学,流体機械)

概要

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The movement toward increased operating speed and reduced wire sizes of semiconductor devices has led to a shift in attention from currently used Al to Cu due to its low resistance as a wiring material. Cu wires are fabricated using the damascine process in which trenches are made by oxide film etching and CMP after the fabrication of Cu film. For this process, Cu film with good embedding characteristics is required. To achieve this Cu film, a process of ionization sputtering, in which sputtered atoms are ionized while they are being transported in the chamber and deposited into the trenches by the bias voltage applied to the substrate, has been proposed. In this paper, we report on the method for topography simulation of fabricated films by Cu ionization sputtering. Characteristic profiles created by film growth due to ionization sputtering are produced as a result of the behavior of ions and atoms on the wafer surface. It has become possible to reproduce embedded shapes of actual Cu films by considering that the adhesion probability of Cu ions is dependent on the incidence angle, the Cu-Ar ion interaction during sputtering, and the surface diffusion of Cu particles.
一般社団法人日本機械学会の論文
2004-01-25