300mm対応スロットアンテナプラズマ源による低損傷・高速ダウンフロープロセスの研究

概要

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A large microwave-excicd plasma source with a slot antenna for 300mm wafers has been developed, and a high-speed downflow process is achieved by low damage. In this system the following developments are realized : (1) a high-density plasma source with a slot antenna, (2) a processing chamber whose shape is optimized by gas flow simulations and evaluation of damage. As a result of process evaluation of the optimized processing chamber, an ashing rate of 4.5μm/min, a poly-Si etching rate of 470nm/min, and an SiN etching rate of 140nm/min are obtained. These values are approximately two-or fivefold of the corrtsponding values obtained by conventional chemical dry etching. In order to maximize the process performance, a compact high-speed wafer transport system has been developed. The maximum overall throughput is 160 wafers/h.
公益社団法人精密工学会の論文
2001-04-05