T0302-2-4 MEMS振動子を用いた昇圧素子(マイクロ・ナノ力学とシステム設計論(2))

概要

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This paper described a boosting device by MEMS oscillator. Recently, the semiconductor memory such as SRAM proceed rapidly to be installed in the storage medium such as mobile information devices. In the semiconductor memory, the voltage more than the input voltage (1.8〜5V) is necessary for rewriting and erasing the data. Therefore, the boosting circuit with coil and capacitor is used now. However, the boosting circuit is a trouble with energy-saving because the boosting that uses the electrical circuit has the energy loss at the switching. The boosting device by MEMS aims at highly effective conversion. The effect of boost of comb-drive actuator was confirmed by SPICE simulation that used the equivalent circuit. When the input voltage was 1.8V, the output of 14V or more was obtained.
社団法人日本機械学会の論文
2009-09-12