1111 Siの異方性エッチングを利用した高アスペクト比形状形成技術(要旨講演,マイクロメカトロニクス)

概要

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Recently, high aspect ratio structure forming is important technology to apply for the sensing device and micro pillar array structure. In a general way, a dry etching process using ICP-RIE (inductively-coupled plasma-reactive ion etching) is well known to fabricate the high aspect ratio structure. However, using Deep RIE generates the scalloping of the sidewall. This paper proposes the high aspect ratio shape forming technology using Si crystal anisotropic etching. In this method, we fabricate the high aspect ratio micro pillar array using (110) Si crystal by TMAH wet etching. As a result, we confirmed the principle for the high aspect ratio structure forming only by using a wet etching process, our proposed method has features of lower cost than ICP-RIE and good surface roughness.
社団法人日本機械学会の論文
2007-03-19