D-1-5 Coupled Vibrating-Body Field Effect Transistorの特性解析(D-1 マイクロアクチュエータ,口頭発表:マイクロナノメカトロニクス)

概要

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In this study, we evaluated properties of Vibrating-Body Field Effect Transistor (VB-FET), which integrated MOSFET into MEMS oscillator, taking into account electro-mechanical interaction between gate and channel. Our modeling was started to express VB-FET as an equivalent circuit and then derived Lagrange's function and dissipation function of VB-FET from the equivalent circuit. From the modeling we calculated a transconductance and an output resistance of Coupled VB-FET and found that the value of the transconductance peak is increased up to 6 times and the output resistance of VB-FET is reduced by half at the resonance frequency. As described here, VB-FET has unique properties which offer new class of functions in MEMS.
一般社団法人日本機械学会の論文
2011-03-18