MNM-P11-2 ゲート・チャネル間の電気機械相互作用を考慮したVB-FETのモデリング(P11 電気等価回路から考えるMEMS設計手法)

概要

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In this study, we evaluated properties of Vibrating-Body Field Effect Transistor (VB-FET), which integrated MOSFET into MEMS oscillator, taking into account electro-mechanical interaction between gate and channel. Our modeling was started to express VB-FET as an equivalent circuit. And we calculated Lagrange's function and dissipation function from the equivalent circuit. We calculated a transconductance and a output resistance of VB-FET. Consequently, the value of the transconductance peaked at resonance frequency and be increased up to 11 times. Then the output resistance of VB-FET is reduced to 18Ω. And we confirmed that resonance frequency changes due to gate voltage. In this way, we demonstrated properties of VB-FET.
一般社団法人日本機械学会の論文
2010-10-12