Transient Thermoelectric Effects in GaAs Crystals

概要

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Dynamic measurements of thermal diffusion processes of conduction carriers and phonons in GaAs crystals have been made in the temperature range 80-300 K using a pulsed laser-induced "transient thermoelectric (TTE)" effect. The initial stage of the decay curves of TTE voltages gives the carrier recombination times τ_r, from which capture cross sections for electrons and holes are evaluated. During the second stage, three relaxation processes with relaxation times τ_f, τ_m, and τ_s were observed in both n- and p-GaAs; the fast, intermediate, and slow components are associated with electrons at the Γ, X, and L point conduction bands for n-GaAs, and the light, split-off band, and heavy holes for p-GaAs, respectively. The final stage yields the thermal diffusion coefficient D_T and the thermal conductivity k for phonons in these crystals.
社団法人応用物理学会の論文
1987-10-20