Transport Properties of SnTe-MnTe System : Anomalous Hall Effect

概要

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Electrical measurements have been made of the Bridgman-grown degeneratemagnetic semiconductors Sn.-.Mn.Te (x<19at.'/.) over a temperature rangefrom 300 to 2 K. The magnetic impurities, Mn ions, have an effect on carriertransport in two different ways. First, they act simply as ionized imptu"ity scatteringcenters giving rise to a decrease in the Hall mobility; the exponent n in the fern-perature dependence of the Hall mobility in the range 77-300 K, pace-', and theresidual resistivity at 4.2 K, p..., are affected appreciably by the magnetic impurityconcentration. Second, the localized spin.s on the Mn ions come into play atlow temperatures, which align ferromagnetically at an ordering temperature.As a result, the Hall effect consists of the ordinary component due to the Lorentzforce and the anomalous one arising from spin dependent scattering of conductioncarriers through a spin-orbit coupling; the second component is found to bestrongly temperature-dependent, RgccT", in agreement with the Voloshinskiimodel.
社団法人日本物理学会の論文
1979-12-15