Dynamic Studies of Transport Properties of γ-Mo_4O_<11> Crystals Using Photoinduced Transient Thermoelectric Effect under Static Electric Field

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The pulsed-laser induced "transient thermoelectric effect (TTE)"of a quasi-two-dimensional γ-Mo_4O_<11> crystal has been measured under a static electric field over the time range 50 ns-100 ms and temperature range 6-300 K. Upon application of static electric field, the TTE voltages are enhanced and most of these signals change their sign for reversal of the field direction, which is attributable to the change in photoinduced 'ambipolar states'. The TTE voltages are characterized by photo-generated carrier diffusions with four relaxation times τ_i (i=1-4), from which we have evaluated the carrier mobilities μ_i. Using our dynamic data and existing block-band model, we have self-consistently calculated the temperature dependence of the dc transport quantities, in satisfactory agreement with the experiments. The difference in the electronic properties for γ- and its similar η-type Mo_4O_<11> is also discussed.
社団法人日本物理学会の論文
1995-02-15