NMR Marginal Oscillator with MOS-FET Operating at Low Temperature
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概要
- 論文の詳細を見る
A MOS field-effect transistor has been successfully used at low temperatures as an active element for an NMR marginal oscillator together with other circuit elements such as silver-mica capacitors and metal oxide film resistors. The whole oscillator system is enclosed in a capsule made of copper and immersed in liquid N_2 or He. NMR measurements on Al^<27> nuclei in ruby crystal are made with this apparatus at 77 and 4.2 K, revealing the typical five-line NMR signals.
- 社団法人応用物理学会の論文
- 1973-11-05
著者
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YAGI Hisao
Department of Applied Physics,Fukui University
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Yagi Hisao
Department Of Applied Physics Fukui University
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Inoue Masasi
Department Of Applied Physics Fukui University:faculty Of Science Hiroshima University
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Inoue Masasi
Department Of Applied Physics Fukui University
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Tatsukawa Toshiaki
Department Of Applied Physics Fukui University
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Naito Takashi
Department Of Applied Physics Fukui University
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Tatsukawa Toshiaki
Department of Applied Physics,Fukui University
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