EPR Experiments on Mn^<2+> in Degenerate Semiconductor GeTe
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概要
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EPR spectra have been measured in the temperature range [40 -300 K ofMn" in highly degenerate semiconductor Gene with carrier concentrationp -10" cm '. The hyperfine structure constant A obtained for lower Mn content(<0.4 at. /) is found to be 56.2 X 10 ' cm ', which is almost equal to that ofSnTe. However, the temperature dependences of A and linewidth Aft of a broad-ened single line for higher Mn content (>0.4 at. ':) arc negligibly small, indicatingan important role of electrostatic screening of carriers around the paramagneticimpurities in the host crystal.
- 社団法人日本物理学会の論文
- 1978-11-15
著者
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YAGI Hisao
Department of Applied Physics,Fukui University
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Yagi Hisao
Department Of Applied Physics Fukui University
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Inoue Masasi
Department Of Applied Physics Fukui University:faculty Of Science Hiroshima University
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Inoue Masasi
Department Of Applied Physics Fukui University
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Tatsukawa Toshiaki
Department Of Applied Physics Fukui University
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KAKU Yoshiyuki
Department of Applied Physics,Fukui University
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Kaku Yoshiyuki
Department Of Applied Physics Fukui University
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Tatsukawa Toshiaki
Department of Applied Physics,Fukui University
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