MOCVD法によるSi基板上へのGaAs結晶成長とその評価

概要

論文の詳細を見る
GaAs crystals were grown on Si substrates [(100) 2° off] by metalorganic chemical vapor deposition (MOCVD). The intermediate layers of GaP, (GaP/GaAsP) strained layer superlattice (SLS) and (GaAsP/GaAs) SLS were inserted to relax the lattice mismatch between GaAs and Si. They were characterized for different thickness of GaAs. The curvature radius of the wafer and the lattice constant perpendicular to the surface decreased with the increasing thickness. The etch pit density also decreased with the increasing thickness and was about 4000cm-2 for 8μm-thick GaAs. In this case no crack was observed on the surface.AlGaAs/GaAs double heterostructure laser diodes have been fabricated on GaAs/Si substrates by MOCVD. A threshold current density Jth at 16.5°C and a characteristic temperature To were 4.9kA/cm2 and 179K respectively.
大同特殊鋼株式会社の論文