203 高能率CMG砥石の開発(精密/微細加工と評価,オーガナイズドセッション)

概要

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Silicon wafer thinning process is meeting great challenges to fulfill requirements of ultra-thin layered devices. Chemo-mechanical grinding (CMG) process is potentially emerging stress relief thinning process which combines the advantages of fixed abrasive machining and chemical mechanical polishing (CMP). A major issue in CMG of Si wafers is improvement of material removal rate (MRR). This paper studies the influence of the wheel specification and grinding condition on the MRR of CMG. Two sets of three-factor two-level full factorial designs of experiment (DOE) are employed to reveal the main effects and interacted effects of CMG wheel specifications and grinding parameters on MRR. The optimal combination scenarios for improving MRR of CMG are analyzed and obtained. By use of the optimal CMG wheel and grinding parameters, the MRR of more than 50nm/min is achieved.
一般社団法人日本機械学会の論文
2008-09-12