701 極薄Siウエハ研削技術に関する研究(OS7-(1)オーガナイズドセッション《精密/微細加工と評価》)

概要

論文の詳細を見る
Recently, the demand for ultra-thin Si wafers is escalating with the rapid development and miniaturization of electronic devices, such as IC cards, mobile phones, and portable computer. The conventional process for thinning is backgrinding with diamond grinding wheels followed by stress relief process, such as chemical mechanical polishing and etching. However, those processes are costly and have environmental concerns. Besides, the thinned wafers have to be transferred from the grinding machine to the stress relief equipments, which increase the risk of breakage of extremely thin wafer during demounting, handling and remounting. In order to combine high efficiency grinding with diamond segments and damage free stress relief with chemo-mechanical grinding segments. This research developed a one-stop grinding machine to achieve the ultra-thin Si wafer fabrication. Results show the minimum Si wafer thickness obtained 5[μm] and 30[μm] including stress relief by a completely fixed-abrasive process.
一般社団法人日本機械学会の論文
2011-08-26