Fabrication of Ir-Based Electrodes by Metal Organic Chemical Vapor Deposition Using Liquid Ir Precursors

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Ir-based electrodes were fabricated by metal organic chemical vapor deposition (MOCVD) using a newly developed liquid precursor, (ethylcyclopentadienyl)bis(ethylene) iridium [Ir(EtCp)(C2H4)2], with a lower decomposition temperature than previous precursors, (ethylcyclopentadienyl)(1,5-cyclooctadiene) iridium [Ir(EtCp)(COD)] and (ethylcyclopentadienyl)(1,3-cyclohexadiene) iridium [Ir(EtCp)(CHD)]. Film growth behavior during MOCVD using Ir(EtCp)(C2H4)2 was investigated and compared with that using Ir(EtCp)(COD) and Ir(EtCp)(CHD). When Ir(EtCp)(C2H4)2 was used, significantly higher nucleation was observed at the initial growth stage than that using Ir(EtCp)(COD) and Ir(EtCp)(CHD) owing to the lower thermal decomposition temperature of 220 °C. Ir, IrO2 and Ir/IrO2 films were successfully prepared using Ir(EtCp)(C2H4)2 on underlying SiO2, TiN and Pb(Zr,Ti)O3, showing that Ir-based top and bottom electrodes can be fabricated by MOCVD. The root-mean-square surface roughnesses and electrical resistivities of Ir and IrO2 films on SiO2 were 2.2 nm and 9.4 μ$\Omega$$\cdot$cm, and 3.3 nm and $1.8\times 10^{2}$ μ$\Omega$$\cdot$cm, respectively. The step coverages of Ir films prepared at 230–400 °C were 35–45%.
2006-09-30