Chemical Stability of SrBi_2Ta_2O_9 Thin Films Prepared by Metalorganic Chemical Vapor Deposition(Special Issue on Nonvolatile Memories)
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概要
- 論文の詳細を見る
The chemical stability of the constituent elements in polycrystalline Sr-Bi-Ta-O thin film with various Bi content prepared by metalorganic chemical vapor deposition(MOCVD)was investigated by X-ray photoelectron spectoroscopy(XPS). Moreover, that of the epitaxial films was also investigated to estimate the effect of the grain boundary in polycrystalline films. Therefore, only the Bi element drastically changed from Bi^<3+> state to Bi^0 one by the Ar sputtering. This change increased with increasing the Ta/Bi mole ratio in the film from 0.64 to 1.67. This result was observed not only for the polycrystalline films but also for the epitaxial films, suggesting that this is the grain character not grain boundary one. The stability and the leakage character of the film strongly depend on the constituent of the film
- 社団法人電子情報通信学会の論文
- 2001-06-01
著者
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Funakubo H
Dep. Of Innovative And Engineered Materials Tokyo Inst. Of Technol.
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舟窪 浩
東工大院総合理工学研究科
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Fujisawa Hironori
Department Of Electrical Electronic And Computer Engineering Graduate School Of Engineering Hitneji
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Mitsuya Masatoshi
Kanagawa Industrial Technology Research Institute
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Nukaga N
Department Of Innovative And Engineered Materials Interdisciplinary Graduate School Tokyo Institute
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NUKAGA Norimasa
the Department of Innovative and Engineered Materials, Interdisciplinary Graduate Shool of Science a
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MITSUYA Masatoshi
the Department of Innovative and Engineered Materials, Interdisciplinary Graduate Shool of Science a
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FUNAKUBO Hiroshi
the Department of Innovative and Engineered Materials, Interdisciplinary Graduate Shool of Science a
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Mitsuya Masatoshi
Kanagawa Industrial Technology Center
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Nukaga Norimasa
Department of Innovative and Engineered Materials, Interdisciplinary Graduate School, Tokyo Institute of Technology
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