Growth of Perovskite (Bi, Ln)(Ni0.5Ti0.5)O3 Thin Films by RF Magnetron Sputtering
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概要
- 論文の詳細を見る
The epitaxial growth and formation mechanism of the partially La- and Nd-substituted perovskite structures, and the ferroelectric properties of bismuth lanthanoid nickel titanate [(Bi1-xLax)(Ni0.5Ti0.5)O3; BLNT and (Bi1-xNdx)(Ni0.5Ti0.5)O3; BNNT] based solid solution films deposited on Pt(100)/MgO(100) substrates by rf sputtering have been investigated using X-ray diffraction, transmission electron microscope, and polarization–electric field hysteresis loop measurements. BLNT samples at $x\geq 0.3$ and BNNT samples at $x\geq 0.4$ were confirmed to have a single-phase perovskite structure. This small difference is speculated that it is related to metal–oxygen bond dissociation energy. The sample substituted with La exhibited the best hysteresis loop at $x = 0.5$ with a remanent polarization of $P_{\text{r}} = 12$ μC/cm2 and the sample substituted by Nd exhibited the best hysteresis loop at $x = 0.4$ with a remanent polarization of $P_{\text{r}} = 2$ μC/cm2.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2007-10-30
著者
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FUKUSHIMA Koji
Department of Internal Medicine, Tohoku University Hospital
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KOBUNE Masafumi
Department of Material Science Chemistry, Graduate School of Engineering, University of Hyogo
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Fujisawa Hironori
Department Of Electrical Electronic And Computer Engineering Graduate School Of Engineering Hitneji
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Yamaji Toru
Department Of Material Science Chemistry Graduate School Of Engineering University Of Hyogo
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Yazawa Tetsuo
Department Of Material Science Chemistry Graduate School Of Engineering University Of Hyogo
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Mineshige Atsushi
Department Of Applied Chemistry Faculty Of Engineering Himeji Institute Of Technology
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Shimizu Masaru
Department Of Chemical Engineering Faculty Of Engineering Tokyo University Of Agriculture And Techno
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Yamaji Toru
Department of Materials Science and Chemistry, Graduate School of Engineering, University of Hyogo, 2167 Shosha, Himeji, Hyogo 671-2201, Japan
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Yamaguchi Hideshi
Device and Materials Laboratories, Fujitsu Laboratories Ltd., 10-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0197, Japan
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Honda Koichiro
Device and Materials Laboratories, Fujitsu Laboratories Ltd., 10-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0197, Japan
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Nishihata Yasuo
Synchrotron Radiation Research Center, Japan Atomic Energy Agency, Mikazuki, Sayo, Hyogo 679-5148, Japan
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Tada Hideto
Department of Materials Science and Chemistry, Graduate School of Engineering, University of Hyogo, 2167 Shosha, Himeji, Hyogo 671-2201, Japan
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Fukushima Koji
Department of Materials Science and Chemistry, Graduate School of Engineering, University of Hyogo, 2167 Shosha, Himeji, Hyogo 671-2201, Japan
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