Fabrication and Characterization of Binary Piezoelectric (Bi<sub>1/2</sub>Na<sub>1/2</sub>)TiO<sub>3</sub>--Ba(Cu<sub>1/3</sub>Nb<sub>2/3</sub>)O<sub>3</sub> Solid Solutions
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概要
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Perovskite-structured solid solutions with compositions of 0.9963{($1-x$)(Bi<sub>1/2</sub>Na<sub>1/2</sub>)TiO<sub>3</sub>--$x$Ba(Cu<sub>1.1/3</sub>Nb<sub>2/3</sub>)O<sub>3</sub>} + 0.0037MnO<sub>2</sub>, with $x = 0{\mbox{--}}0.06$ [abbreviated as ($1-x$)BNT--$x$BCN)], were fabricated by normal sintering, and their structural, and piezo- and ferroelectric properties were investigated in detail. The X-ray diffraction profiles of the ($1-x$)BNT--$x$BCN solid solutions with $x = 0{\mbox{--}}0.06$ suggested that the rhombohedral-tetragonal morphotropic phase boundary (MPB) in this material system is in the compositional region $x = 0.0425{\mbox{--}}0.0460$. The cross-sectional transmission electron microscopy (TEM) images and selected-area electron diffraction (SAED) patterns of the ($1-x$)BNT--$x$BCN samples with $x = 0.0475$ suggested that the present materials have a modulation structure arranged by a double period along the [111] direction. It is shown that the tetragonal BNT--BCN ($x = 0.0475$) solid solution with a composition of 0.9490BNT$\Cdot$0.0473BCN$\Cdot$0.0037MnO<sub>2</sub> near the MPB has a piezoelectric coefficient ($d_{33}$), a relative permittivity ($\varepsilon_{33}{}^{\text{T}}/\varepsilon_{0}$), and a remanent polarization ($P_{\text{r}}$) of approximately 1.8, 3.2, and 2.8 times larger, respectively, than those of the BNT solid solution without BCN substitution.
- 2011-09-25
著者
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KOBUNE Masafumi
Department of Material Science Chemistry, Graduate School of Engineering, University of Hyogo
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Teraoka Kenji
Department of Geriatrics, Faculty of Medicine, University of Tokyo
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Nishioka Hiroshi
Department Of Electronics Nagoya Institute Of Technology
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Yamaguchi Hideshi
Device and Materials Laboratories, Fujitsu Laboratories Ltd., 10-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0197, Japan
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Honda Koichiro
Device and Materials Laboratories, Fujitsu Laboratories Ltd., 10-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0197, Japan
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Yamaguchi Hideshi
Device and Materials Laboratories, Fujitsu Laboratories Ltd., Atsugi, Kanagawa 243-0197, Japan
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