Characterization of (Bi3.25Nd0.75)Ti3O12 Thin Films with $a$- and $b$-Axis Orientations Deposited on Nb:TiO2 Substrates by High-Temperature Sputtering
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概要
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$a$- and $b$-axis-oriented (Bi3.25Nd0.75)Ti3O12 (BNT-0.75) films, 3.0 μm thick, were fabricated on conductive Nb:TiO2(101) substrates with 0.001–0.79 mass % Nb at 650 °C by high-temperature sputtering. All the films had a mostly single-phase orthorhombic structure and $a$- and $b$-axis orientations. The degree of $a$- and $b$-axis orientations was high, with values of ${\geq}96$%. BNT-0.75 films grown heteroepitaxially on Nb:TiO2(101) substrates containing 0.79 mass % Nb were comprised of nanoplate-like crystals and exhibited the best hysteresis loop shapes, with a remanent polarization ($2P_{\text{r}}$) of 29 μC/cm2 and a coercive field ($2E_{\text{c}}$) of 297 kV/cm.
- 2010-09-25
著者
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KOBUNE Masafumi
Department of Material Science Chemistry, Graduate School of Engineering, University of Hyogo
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Fujisawa Hironori
Department Of Electrical Electronic And Computer Engineering Graduate School Of Engineering Hitneji
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Yazawa Tetsuo
Department Of Material Science Chemistry Graduate School Of Engineering University Of Hyogo
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Oshima Hisashi
Department Of Electrical Engineering University Of Nebraska:college Of Science And Technology Nihon
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Mineshige Atsushi
Department Of Applied Chemistry Faculty Of Engineering Himeji Institute Of Technology
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Shimizu Masaru
Department Of Chemical Engineering Faculty Of Engineering Tokyo University Of Agriculture And Techno
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Tamura Akihiro
Department Of Architecture Faculty Of Engineering Yokohama National University
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Daiko Yusuke
Department Of Materials Science And Chemistry University Of Hyogo
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Imagawa Kazuki
Department of Materials Science and Chemistry, Graduate School of Engineering, University of Hyogo, 2167 Shosha, Himeji, Hyogo 671-2201, Japan
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Tamura Akihiro
Department of Materials Science and Chemistry, Graduate School of Engineering, University of Hyogo, 2167 Shosha, Himeji, Hyogo 671-2201, Japan
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Yamaguchi Hideshi
Device and Materials Laboratories, Fujitsu Laboratories Ltd., 10-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0197, Japan
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Honda Koichiro
Device and Materials Laboratories, Fujitsu Laboratories Ltd., 10-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0197, Japan
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Daiko Yusuke
Department of Materials Science and Chemistry, Graduate School of Engineering, University of Hyogo, 2167 Shosha, Himeji, Hyogo 671-2201, Japan
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Kobune Masafumi
Department of Materials Science and Chemistry, Graduate School of Engineering, University of Hyogo, 2167 Shosha, Himeji, Hyogo 671-2201, Japan
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Mineshige Atsushi
Department of Materials Science and Chemistry, Graduate School of Engineering, University of Hyogo, 2167 Shosha, Himeji, Hyogo 671-2201, Japan
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Oshima Hisashi
Department of Materials Science and Chemistry, Graduate School of Engineering, University of Hyogo, 2167 Shosha, Himeji, Hyogo 671-2201, Japan
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TAMURA Akihiro
Department of Architecture and Building Science, Faculty of Engineering, Yokohama National University
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