Effects of deposition temperature on characteristics of ferroelectric Sr
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Sr<inf>2</inf>Bi<inf>4</inf>Ti<inf>5</inf>O<inf>18</inf>(SBTO) films with a- and b-axis orientations, and thicknesses of 0.9–1.2 µm were sputter-deposited on conductive Nb:TiO<inf>2</inf>(101) substrates containing 0.79 mass % Nb. The deposition temperature was varied from 575 to 700 °C under a fixed gas pressure of 0.4 Pa, and the structural and ferroelectric characteristics of the films were investigated. SBTO films deposited at 625–700 °C had a mostly single-phase orthorhombic structure, with a high degree of a- and b-axis orientations [α<inf>(</inf><inf>h</inf><inf>00)/(0</inf><inf>k</inf><inf>0)</inf>] of 99.0–99.8%. In addition, the full width at half maximum of the (200) diffraction peak was 0.69–0.86°, which indicated good crystallinity. SBTO films deposited at 625–650 °C had a nanoplate-like microstructure with the plates aligned along the [010] direction. The real room-temperature remanent polarization [Formula: see text], taking the porosity between the nanoplates into account, exhibited a maximum of 40 µC/cm<sup>2</sup>at 650 °C. Thus, the optimal deposition temperature for heteroepitaxial growth of SBTO nanoplates with a high α<inf>(</inf><inf>h</inf><inf>00)/(0</inf><inf>k</inf><inf>0)</inf>of ≥99.0% and excellent ferroelectric properties on conductive Nb:TiO<inf>2</inf>substrates is 650 °C under a gas pressure of 0.4 Pa.
- 2014-09-03
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