溶液気化化学気相堆積法(LSMCVD)によるPbTiO_3薄膜の作製

概要

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The ferroelectric PbTiO_3 (PT) thin films were deposited on MgO (100) and Si (001) substrates by Liquid Source Mist Chemical Vapor Deposition (LSMCVD) method. The Pb (DPM)_2 and Ti (iOC_3H_7)_4 (TTIP) were used as metal sources. Metal-organic sources were dissolved in 2-metoxyethanol. The PT thin films have (h00) and (00l) preferred orientations at lower metal source concentrations on MgO (100) substrate. The epitaxial PT thin film could be prepared on MgO (100) substrate at 0.02mol/L solution at 600℃. The epitaxial PT thin films having stoichiometric composition and smooth surfaces were prepared on MgO (100) substrates. In this study, the solution concentration is an important process parameter to fabricate epitaxial PT thin films. The PT thin films which have polycrystalline phases on Pt (111)/TiO_2/SiO_2/Si (001) showed about 320 of dielectric constants and 3uC/cm^2 of remanent polarization with 109.54kV/cm of coercive field.
社団法人日本セラミックス協会の論文
2006-07-01