MNM-3A-4 (110)単結晶Siマイクロ試験片における破壊の結晶異方性のワイブル統計解析(セッション 3A 単結晶・多結晶シリコンの疲労寿命評価とメカニズムの解明)

概要

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Uniaxial tensile testing for single crystal silicon (SCS) films was conducted to investigate the fracture mechanism of silicon. The loading axis of the SCS specimens had three main crystallographic orientations, that is <100>, <110>, and <111>, fabricated from one (110) silicon-on-insulator wafer. The dimensions of specimen test part were 10 μm wide, 5 μm thick, and 120 μm long having 1 μm-depth notch at the center. The measured average fracture force of <100>, <110>, and <111> specimens was 44.2, 53.5, and 45.8 mN, respectively. The difference in fracture force between <110> and <111> specimens was well elucidated with the normal stress for (111) cleavage plane using Weibull statistics considering the stress distribution on notch surface and existence of multiple cleavage planes in SCS.
一般社団法人日本機械学会の論文
2010-10-12