429 単結晶シリコン引張試験における表面酸化の影響評価(T09-2 微小機械システムにおけるマイクロ・ナノ力学(2) 単結晶シリコンの力学特性,大会テーマセッション,21世紀地球環境革命の機械工学:人・マイクロナノ・エネルギー・環境)

概要

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This paper reports on the tensile testing of single crystal silicon (SCS), whose specimen surface was intentionally oxidized and the effect of the oxide thickness on the mechanical properties in order to investigate the fatigue fracture mechanism under cyclic loading. SCS specimens were fabricated from silicon-on-insulator (SOI) wafer with 5-μm -thick device layer and oxide layer were grown to the specimens using thermal dry oxidation at 1100℃. The specimen test part was 120 or 600 μm long and 4 μm wide. Quasi-static tensile testing of SCS specimen without oxide layer, with 50, 100, 200-nm-thick oxide was performed. As the results, the fracture origin location changed from the surface of the specimen of SCS without oxide to inside of silicon of oxidized specimen. This change may be caused by the oxidation stress near the interface and formation of oxide precipitation defects in silicon during oxidation.
社団法人日本機械学会の論文
2008-08-02