T0302-1-1 (110)単結晶Siの引張試験における破壊の結晶異方性評価([T0302-1]高信頼マイクロ・ナノデバイスのための設計・計測技術(1):シリコンの破壊と疲労)

概要

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In this paper, we report on uniaxial tensile tests for single crystal silicon (SCS) specimens having three different crystallographic orientations such as <100>, <110>, and <111> in loading axes, to evaluate the crystal anisotropy on the fracture behavior. The specimens were fabricated on the same (110) silicon on insulator(SOI) wafer. The test parts were 10μm wide, 5μm thick, and 120μm long and they have 1μm-depth notch at the center. The fracture force of <100>, <110>, and <111> specimens were 45.1, 55.9, and 45.5 mN, respectively. The fracture surface of <111> and <110> specimens were mostly in (111) plane.
一般社団法人日本機械学会の論文
2010-09-04