PS12 埋め込みひずみゲージ法による薄膜微細加工誘起応力の評価(フェロー賞対象ポスターセッション)

概要

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During thin film deposition processing in semiconductor fabrication, both the intrinsic stress and thermal stress in thin films cause large change of the residual stress in a transistor structure. Since such large change of the residual stress in a transistor structure deteriorate both the electronic functions and reliability of the transistor, it has become very important to control the residual stress. The authors have developed a new nondestructive measurement method of the residual stress by using piezoresistive strain sensor chip. As a result, it was found that the tensile stress of about 20 MPa appeared after the deposition of a 50-nm thick W film and the residual stress changed to large compressive stress after the local etching of the film by using a focus ion beam method (FIB). These results corresponded well to analyzed ones. It was concluded that the developed strain sensor can measure the change of the residual stress in a transistor formation area during fabrication.
一般社団法人日本機械学会の論文
2010-10-09