半導体基板表面のミクロ溝における銅スパッタ膜リフロー現象の流動形状変化に及ぼす形状パラメータの影響の解析的検討

概要

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It is important that copper films fill the sub-micron trenches on silicon substrates in order to produce high-density electronic devices. In this paper, we numerically calculated changes of the copper film profiles in trenches on silicon substrates in the reflow process by 2 and 3-dimensional analyses. Calculation results from the model of surface diffusion in a thin layer on the film were similar to experimental results. The relationship between the change of the film profile and the geometric parameters were calculated. The results show that a uniform and thick initial film on the side walls of a trench is important to avoid film-bridge and void formation in the trench. In order to promote flow rate into trenches, a thick initial film on the bottom of a trench and narrow trenches are effective.
社団法人日本機械学会の論文
1998-11-25