酸化膜,窒化膜付シリコンウエハの950℃における放射熱物性

概要

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The spectral normal emissivity, reflectance and transmittance of silicon wafers were measured at a temperature of 950℃ and wavelengths of 0.7 to 9μm. Samples were seven silicon wafers with oxide films of 2.2 to 628 nm film thickness and nitride films of 50 to 190 nm film thickness with small dopant density. It was found that the emissivity of specular surfaces of silicon wafers with very thin oxide film at wavelengths of 0.7 to 8 μm were 0.6 to 0.7, the reflectances were 0.1 to 0.3 and the transmittance were to 0 to 0.2. The emissivity of silicon wafers with oxide films of more than 75 nm film thickness and nitride films of more than 48 nm film thickness changed from 0.6 to 1.0 according to film thickness and wavelength. The emissivity of the rough surface of a wafer was greater than that of a specular surface by 0.07. The emissivity and reflectance of silicon wafers were calculated using the free carrier absorption theory considering the interference phenomenon. Calculated results agreed with experimental results.
社団法人日本機械学会の論文
1989-08-25