Carrier Concentration Dependence of the Pseudo Spin Gap Behavior in LaBa_2Cu_3O_y
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概要
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The carrier-concentration dependence of the pseudo spin gap behaviors in the optimum and the overdoped regions of the LaBa_2Cu_3O_y system has been studied by NMR. In the temperature dependences of 1/T_1T, it was observed that the spin gap behavior, which is known to exist in the underdoped region, is suppressed in the overdoped region. This seems to confirm the expectation that the spin gap behavior is specific to the underdoped region. However, LaBa_2Cu_3O_<6.96>, which has T_c as high as 95 K, still exhibits a clear spin-gap-like behavior. This fact suggests that the optimum hole concentration to maximize T_c does not necessarily coincide with that where the spin gap behavior disappears in this system.
- 社団法人日本物理学会の論文
- 1995-02-15
著者
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Ueda Yutaka
Institute For Solid State Physics University Of Tokyo
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GOTO Atsushi
National Institute for Materials Science
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Yasuoka Hiroshi
Institute For Chemistry Research Kyoto University
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Yasuoka Hiroshi
Department Of Mathematics And Physics The National Defense Academy
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Goto Atsushi
National Research Institute For Metals
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Goto Atsushi
Institute For Solid State Physics University Of Tokyo
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Goto A
National Research Laboratory For Metal
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YASUOKA Hiroshi
ISSP of the University of Tokyo
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Otzschi Kenji
Institute For Solid State Physics University Of Tokyo
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Goto Atsushi
Institute For Chemical Research Kyoto Univeristy
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Yasuoka Hiroshi
Institute Fo Solid State Physics University Of Tokyo
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Ueda Yutaka
Institute For Solid State Physic The University Of Tokyo
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Goto Atsushi
National Institute for Materials Science (NIMS)
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