1206 ICPエッチング法による高アスペクト比微細構造体の作製(アクチュエータのためのマイクロナノプロセス,一般講演)

概要

論文の詳細を見る
Silicon dry etching technology is currently attracting the attention. This technology makes it possible to fabricate rectangular structures by repeating two steps of etching process and protection process. Therefore, our research introduces the ability of Si dry etching technology in order to fabricate un-tapered, high precision Au microstructures containing rectangular patterns, hi the present study, a high precision Si microstructure was fabricated using ICP-RIE apparatus. Au electroforming was realized from the bottom of the structure groove. These resulted in the successful formation, about 4 um thick, void-free Au film in a space as narrow as 2.6 μm in large effective area of 60 mm squares. Therefore, it is expected to be used in the production of a wide variety of devices that have not yet been put into practice.
2010-04-18