T1601-2-4 カーボンウェハを用いた大面積X線マスクの作製([T1601-2]マイクロナノメカトロニクス(2))

概要

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Recently, the demand of micro fabrication is very increased. The LIGA process is drawing the attention of engineers as one of the most promising technologies for fabricating three-dimensional microstructures. In X-ray lithography, the accuracy of the completed structure depends largely on the accuracy of the used X-ray mask. In the case of resin membrane, X-ray masks have disadvantage of crease and sag due to X-ray derived heat after several cycles of X-ray exposure. Therefore, we have newly proposed that carbon thin wafer is used as membrane material because it has an extremely small thermal expansion coefficient. We have fabricated carbon membrane X-ray mask on 6 inch wafer having 1:1 lines and spaces pattern at a pitch of 5.3μm, with a large effective area of 100x100mm^2 for X-ray lithography. In results of X-ray lithography, we obtained high aspect ratio resist structure of over 40μm at a pitch of 5.3μm. Therefore, it is very expected to improve X-ray mask accuracy by using carbon wafer membrane.
一般社団法人日本機械学会の論文
2010-09-04