OS0415 応力印加によるバルクシリコンのバンドひずみとピエゾ抵抗物性への効果(原子スケールモデリングとナノ・マイクロ実験力学(2))

概要

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We have discussed the deformation of band structure due to stresses and the piezoresistivity in single-crystal bulk silicon based on the first-principles calculations. For n-type bulk silicon, the longitudinal and transverse piezoresistance coefficients originate from the energy gap between the valleys, whereas the shear piezoresistance coefficient arises from a distortion of the "ellipsoids" in the valleys. The distinction between the origins of piezoresistivity can be followed as a dependence on a surface concentration or temperature by our novel procedure to calculate the piezoresistance coefficients. Furthermore, for p-type bulk silicon, we have applied the perturbational approach to the band splitting in the valence bands due to the spin-orbit coupling, and then a more quantitative estimate of the piezoresistance coefficients can be expected.
一般社団法人日本機械学会の論文
2008-09-16