T0302-3-4 犠牲層ウェットエッチングにおける物理パラメータのキャリブレーション([T0302-3]高信頼マイクロ・ナノデバイスのための設計・計測技術(3):微小構造部材の加工・評価)

概要

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The authors have so far proposed the governing equation of wet etching process of MEMS sacrifice layer and the computational method using finite volume method. In this governing equation, three physical parameters are used as implicit parameters to express the etching characteristics including flow, diffusion and chemical reaction. They are hardly measured experimentally. Hence, in this paper, the novel and practical method for their automatic calibration is proposed. It has been applied to the case using SiO2 and HF, and has been found to be effective. Fast convergence was obtained, to which an original interpolation function and iteration scheme contributed.
2010-09-04