636 シリコンナノワイヤーのピエゾ抵抗効果に関する第一原理計算(OS11-1 電子・原子レベルのマルチシミュレーションとその応用)

概要

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We have simulated the piezoresistance coefficients in single-crystal silicon nanowires (SiNWs) based on the first-principle calculations of model structures. Variations of band gaps and curvatures due to tensile stresses will exert an influence on carrier densities and effective masses, and frequently contribute to a drastic turn of the conductivity. In particular, in the <001> SiNW model, uniaxial tensile stress to [001] longitudinal direction causes a sharp drop in band energy of the highest valence band with a small hole effective mass, leading to a drastic decrease in the hole conductivity. It is found that p-type <001> SiNW will be one of the most suitable candidates for nano-scale piezoresistor due to a giant piezoresistivity.
一般社団法人日本機械学会の論文
2007-10-24