Baフェライト磁気ディスクの低温作製と記録再生特性

概要

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Magnetoplumbite-type Ba ferrite (BaM) layers were deposited on AnO (002) and Pt (111) underlayers by using a facing-targets sputtering apparatus in a gas mixture of Ar, Xe, and O_2 at various substrate temperatures T_s. A Ba ferrite layer as-deposited on a ZnO underlayer at T_s values above 475℃and one as-deposited on a Pt(mmm) underlayer at T_s values above 500℃ revealed clear c-axis oientation. The saturation magnetization 4πM_s was 5.1 kG and 4.0 kGfor AnO and Pt underlayers, respectively. Both underlayers exhibited high perpendicular coercivity H_<c//> and low in-plane coercivity H_<c⊥> of about 2.4 and 0.2kOe, respectively. A Ba ferrite layer deposited at a relatively low T_s of 300℃ and annealed at 800℃ in air also revealed excellent c-axis orientation and exhibited a relatively low perpendicular coercivity H_c〓 of 0.6kOe. A clear di-pulse was observed for the isolated wave form of a BaM/Pt film as-deposited at T_s of 600℃ owing to the perfect perpendicular magnetization orientation, and a relatively high linear recording density D_<50> of 123 kFRPI was achieved.
社団法人日本磁気学会の論文
1998-04-15