Ferroelectric Domain Formation in Short Circuited KH_2PO_4
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概要
- 論文の詳細を見る
Domain configurations of short circuited KH.P0. crystals have been observedfor different formation processes with simultaneous measurements of the dielec-tric constant. Two tvr>es of domain confiuurations are obtained. One with a largedielectric constant, which contains many fine domains, is obtained by cooling fromthe paraelectric phase. The other with a small dielectric constant is obtainedby decreasing the applied static bias field to zero. Contrary to the widely acceptedidea, the ferroelectric domain is formed easily in the absence of the electrostaticdepolarization field. A model based upon the spinodal decomposition is proposedto elucidate the domain formation process of the short circuited crystal.
- 社団法人日本物理学会の論文
- 1984-01-15
著者
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NAKAMURA Eiji
Faculty of Integrated Arts and Sciences,Hiroshima University
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Abe Kohji
Department Of Materials Science Faculty Of Science Hiroshima University
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Nakamura E
Hiroshima Univ. Higashi‐hiroshima
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Nakamaura Eiji
Faculty Of Science Hiroshima University
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Amako Katsuya
National Laboratory for High Energy Physics KEK
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Nakamura E
Hiroshima Univ. Higashi-hiroshima Jpn
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Abe K
Department Of Applied Physics And Chemistry University Of Electro-communications
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Abe K
Department Of Materials Science And Engineering Waseda University
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USHIO Satoshi
Faculty of Science,Hiroshima University
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ABE Kohji
Faculty of Science,Hiroshima University
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Abe Kenji
Department Of Electronic Engineering Faculty Of Engineering Kobe University
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Nakamura Eiji
Faculty Of Integrated Arts And Sciences Hiroshima University
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Ushio S
Department Of Materials Science Faculty Of Science Hiroshima University:semiconductor Laboratory Shi
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Ushio Satoshi
Department Of Materials Science Faculty Of Science Hiroshima University:shin-etsu Handotai Co
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Nakamura Eiji
Department of Materials Science, Faculty of Science, Hiroshima University
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