Ferromagnetic Iron Silicide Thin Films Prepared by Pulsed-Laser Deposition
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概要
- 論文の詳細を見る
The Fe-Si system has both semiconducting phases, such as $\beta$-FeSi2, amorphous FeSi2 and FeSi, and the ferromagnetic phase of Fe3Si. In order to fabricate a heterostructural thin film consisting of semiconductor and ferromagnetic metal of a Fe-Si system, it is indispensable for the ferromagnetic Fe3Si thin film to be grown at a low substrate temperature. In this work, we studied the growth of Fe3Si thin film by pulsed-laser deposition, and found that the single-phase Fe3Si thin film and ferromagnetic amorphous-like thin film were grown at substrate temperatures of 300°C and room temperature, respectively.
- Japan Society of Applied Physicsの論文
- 2003-07-15
著者
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Yoshitake Tsuyoshi
Department Of Applied Science For Electronics And Materials Kyushu University
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Nagayama Kunihito
Department Of Aeronautics And Astronautics Kyushu University
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Nakagauchi Dai
Department of Applied Science for Electronics and Materials, Kyushu University, 6-1 Kasuga, Fukuoka
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Nakagauchi Dai
Department Of Applied Science For Electronics And Materials Kyushu University
-
Nagayama Kunihito
Department Of Aeronautics And Astronautics
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Yoshitake Tsuyoshi
Department of Applied Physics, Faculty of Engineering, Kyushu University
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