Current-Induced Magnetization Switching in Fe3Si/FeSi2 Artificial Lattices
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概要
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Current-induced magnetization switching in Fe3Si/FeSi2 artificial lattices, wherein ferromagnetic Fe3Si layers were antiferromagnetically coupled, was studied in a current perpendicular to plane geometry. While the electrical resistance--injected current (R--I) curve exhibited a clear hysteresis loop under zero magnetic field, the hysteresis loop in the curve disappeared under magnetic fields larger than the saturation magnetic field. This implies that the interlayer coupling was altered from antiferromagnetic to ferromagnetic by the current injection under zero magnetic field; on the other hand, under the magnetic fields, the coupling was fixed to be ferromagnetic regardless of the current injection.
- 2012-02-25
著者
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Takeda Kaoru
Department Of Applied Science For Electronics And Materials Kyushu University
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Yoshitake Tsuyoshi
Department of Applied Physics, Faculty of Engineering, Kyushu University
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Hirakawa Shin-ichi
Department of Applied Science for Electronics and Materials, Kyushu University, Kasuga, Fukuoka 816-8580, Japan
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Sonoda Takayuki
Department of Applied Science for Electronics and Materials, Kyushu University, Kasuga, Fukuoka 816-8580, Japan
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Sakai Ken-ichiro
Department of Applied Science for Electronics and Materials, Kyushu University, Kasuga, Fukuoka 816-8580, Japan
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Takeda Kaoru
Department of Electrical Engineering, Fukuoka Institute of Technology, Fukuoka 811-0295, Japan
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