n-Type Nanocrystalline FeSi₂/intrinsic Si/p-Type Si Heterojunction Photodiodes Fabricated by Facing-Target Direct-Current Sputtering
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概要
- 論文の詳細を見る
n-Type nanocrystalline (NC) FeSi2/intrinsic (i) Si/p-type Si heterojunctions, which were prepared by facing-target direct current sputtering, were evaluated as near-infrared photodiodes, and the effects of thin i-Si layer insertion on diode performance were studied. Their junction capacitance and reverse leakage current were clearly reduced compared with those of n-type NC-FeSi2/p-type Si heterojunctions. The capacitance--voltage curve implied that the effects of interface states is relatively suppressed by i-Si insertion. The near-infrared light detection performance was investigated using a 1.33 μm laser in the temperature range of 77--300 K. The detectivities at 300 and 77 K were 1.9 \times 10^{8} and 3.0 \times 10^{11} cm Hz1/2 W-1, respectively, at a negative bias of -5 V, which were markedly improved compared with that of p--n heterojunctions. This might be because the formation of interface states that act as trap centers for photocarriers is suppressed.
- 2012-02-25
著者
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Yamashita Kyohei
Department Of Agricultural Chemistry Faculty Of Agriculture Tohoku University
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Li Chen
Department Of Biological Science And Technology And State Key Laboratory Of Pharmaceutical Biotechno
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Shaban Mahmoud
Department of Applied Science for Electronics and Materials, Kyushu University, Kasuga, Fukuoka 816-8580, Japan
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Yoshitake Tsuyoshi
Department of Applied Physics, Faculty of Engineering, Kyushu University
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Kawai Kenji
Department of Aquaculture, Kochi University
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Promros Nathaporn
Department of Applied Science for Electronics and Materials, Kyushu University, Kasuga, Fukuoka 816-8580, Japan
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Okajima Toshihiro
Saga Light Source, Kyushu Synchrotron Light Research Center, Tosu, Saga 841-0005, Japan
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