Electrical and Photovoltaic Properties of n-Type Nanocrystalline-FeSi2/p-Type Si Heterojunctions Prepared by Facing-Targets Direct-Current Sputtering at Room Temperature
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概要
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Semiconducting nanocrystalline iron disilicide (NC-FeSi2) thin films were deposited on Si(111) substrates by facing-targets direct-current sputtering at room temperature. The electrical and photovoltaic properties of the n-type NC-FeSi2/p-type Si heterojunctions were measured and investigated. We experimentally proved the possibility of employing this combination in photovoltaics. A large leakage current observed in the current–voltage characteristics, which was predominantly due to the heterojunction interface defects, resulted in a low conversion efficiency.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2008-07-25
著者
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Kondo Haruhiko
Department Of Chest Surgery National Cancer Center Central Hospital
-
Shaban Mahmoud
Department of Applied Science for Electronics and Materials, Kyushu University, Kasuga, Fukuoka 816-8580, Japan
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Yoshitake Tsuyoshi
Department of Applied Physics, Faculty of Engineering, Kyushu University
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Nakashima Kazuhiro
Department of Applied Science for Electronics and Materials, Kyushu University, Kasuga, Fukuoka 816-8580, Japan
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Kondo Haruhiko
Department of Applied Science for Electronics and Materials, Kyushu University, Kasuga, Fukuoka 816-8580, Japan
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