Effect of H2S Annealing on Ag-Rich Ag--In--S Thin Films Prepared by Vacuum Evaporation
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概要
- 論文の詳細を見る
We investigated the effect of H2S annealing on Ag--In--S thin films prepared by vacuum evaporation. In thin films annealed above 350 °C, diffraction peaks except chalcopyrite AgInS2 phase were not observed for a starting material ratio of 1.0 but observed for that of 1.2. Thin films annealed at 400 °C with a starting material ratio of 1.5 contained several phases. We found that the Ag/In ratios of the films could be controlled by changing the starting material ratio. Grains of films with composition ratios of 1.0 and 1.2 were nonuniform, whereas those with a composition ratio of 1.5 were uniform.
- The Japan Society of Applied Physicsの論文
- 2011-05-25
著者
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Yoshino Kenji
Department Of Anatomy Nihon University School Of Dentistry At Matsudo
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Yamashita Kyohei
Department Of Agricultural Chemistry Faculty Of Agriculture Tohoku University
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Yoshitake Tsuyoshi
Department of Applied Physics, Faculty of Engineering, Kyushu University
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Yoshino Kenji
Department of Electrical and Electronics Engineering, Miyazaki University, Miyazaki 889-2192, Japan
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Tokuda Takahiro
Department of Electrical and Electronics Engineering, Miyazaki University, Miyazaki 889-2192, Japan
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Akaki Yoji
Department of Electrical and Computer Engineering, Miyakonojo National College of Technology, Miyakonojo, Miyazaki 885-8567, Japan
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Nakamura Shigeuki
Department of Electrical and Electronics Engineering, Tsuyama National College of Technology, Tsuyama, Okayama 708-8509, Japan
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