Temperature-Dependent Current-Induced Magnetization Switching in Fe₃Si/FeSi₂/Fe₃Si Trilayered Films

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概要

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• Fe₃Si/FeSi₂/Fe₃Si trilayered films were grown on Si(111) substrates at a substrate temperature of 300 °C by facing-targets direct-current sputtering, and current-induced magnetization switching in current-perpendicular-to-plane geometry was studied for the films wherein an antiferromagnetic interlayer coupling perpendicular to the plane was probably formed at room temperature. The appearance of a hysteresis loop in the electrical resistance--injection current curve well coincided with that of a hysteresis loop in the magnetization curve perpendicular to the plane. In addition, the hysteresis loop in the electrical resistance--injection current curve disappeared under large magnetic fields. The origin of the change in the electrical resistance for the injection current might be the change in the interlayer coupling.

• 2011-08-25

著者

• Takeda Kaoru

  Department Of Applied Science For Electronics And Materials Kyushu University

• Yoshitake Tsuyoshi

  Department of Applied Physics, Faculty of Engineering, Kyushu University

• Hirakawa Shin-ichi

  Department of Applied Science for Electronics and Materials, Kyushu University, Kasuga, Fukuoka 816-8580, Japan

• Sonoda Takayuki

  Department of Applied Science for Electronics and Materials, Kyushu University, Kasuga, Fukuoka 816-8580, Japan

• Sakai Ken-ichiro

  Department of Applied Science for Electronics and Materials, Kyushu University, Kasuga, Fukuoka 816-8580, Japan

• Takeda Kaoru

  Department of Electrical Engineering, Fukuoka Institute of Technology, Fukuoka 811-0295, Japan

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