Low-Temperature Annealing of n-Type $\beta$-FeSi2/p-Type Si Heterojunctions
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概要
- 論文の詳細を見る
$\beta$-FeSi2 thin films epitaxially grown on Si(111) were annealed in vacuum at different annealing temperatures. The effects of low-temperature postannealing on the photovoltaic properties of $\beta$-FeSi2/Si heterojunctions were investigated. The heterojunctions annealed at 300 °C exhibited an apparent improvement in photovoltaic performance as compared with as-grown heterojunctions. This improvement may be due to Fe atoms, that diffused into the Si substrate during $\beta$-FeSi2 film deposition, were gettered by the postannealing process.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2008-05-25
著者
-
Shaban Mahmoud
Department of Applied Science for Electronics and Materials, Kyushu University, Kasuga, Fukuoka 816-8580, Japan
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Yoshitake Tsuyoshi
Department of Applied Physics, Faculty of Engineering, Kyushu University
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Nakashima Kazuhiro
Department of Applied Science for Electronics and Materials, Kyushu University, Kasuga, Fukuoka 816-8580, Japan
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Nomoto Keita
Department of Applied Science for Electronics and Materials, Kyushu University, Kasuga, Fukuoka 816-8580, Japan
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