Substrate Temperature Dependence of Photovoltaic Properties of $\beta$-FeSi2/Si Heterojunctions Prepared by Facing-Target DC Sputtering
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概要
- 論文の詳細を見る
We fabricated $n$-type $\beta$-FeSi2/$ p$-type Si heterojunctions to be used as thin-film solar cells by the facing-target DC sputtering method. The $\beta$-FeSi2 films were deposited on Si(111) substrates at different substrate temperatures ranging from 525 to 660 °C. The effect of the substrate temperature on the photovoltaic properties was studied on the basis of the current–voltage characterization and the crystalline structural evaluation of the $\beta$-FeSi2/Si heterojunctions. It was found that 600 °C is the optimum substrate temperature suitable for the photovoltaic application.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2007-12-15
著者
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Yoshitake Tsuyoshi
Department Of Applied Science For Electronics And Materials Kyushu University
-
Nakashima Kazuhiro
Department Of Intelligent Machinery And Systems Faculty Of Engineering Kyushu University
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Yoshitake Tsuyoshi
Department of Applied Science for Electronics and Materials, Kyushu University, Kasuga, Fukuoka 816-8580, Japan
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Shaban Mahmoud
Department of Applied Science for Electronics and Materials, Kyushu University, Kasuga, Fukuoka 816-8580, Japan
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