Homoepitaxial Growth of Diamond Single-Phase Thin Films by Pulsed Laser Ablation of Graphite : Surfaces, Interfaces, and Films
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概要
- 論文の詳細を見る
Diamond thin films were grown on diamond (100) substrates in oxygen atmospheres by pulsed laser deposition (PLD) using an ArF excimer laser. The optimum oxygen atmosphere of 5×10^<-2> Torr can etch the sp2 bonding fractions preferentially. At substrate temperatures between 550℃ and 600℃C, single-phase diamond films consisting of diamond crystal with diameters of 1-5 μm could be grown. The results demonstrated that the diamond thin films can be homo-grown using PLD by the optimization of the deposition parameters such as the oxygen pressure and the substrate temperature.
- 社団法人応用物理学会の論文
- 2001-06-01
著者
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Nishiyama Takashi
Department Of Applied Life Science Faculty Of Biotechnology And Life Science Sojo University
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Yoshitake Tsuyoshi
Department Of Applied Science For Electronics And Materials Kyushu University
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Nagayama Kunihito
Department Of Aeronautics And Astronautics Kyushu University
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Nishiyama T
Department Of Applied Science For Electronics And Materials Kyushu University
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Nishiyama Takashi
Department Of Applied Chemistry Graduate School Of Engineering Tokyo University Of Agriculture And T
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Nagayama Kunihito
Department Of Aeronautics And Astronautics
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Yoshitake Tsuyoshi
Department of Applied Physics, Faculty of Engineering, Kyushu University
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Nishiyama Takashi
Department of Aeronautics and Astronautics, Faculty of Engineering, Kyushu University, Motooka, Nishi-ku, Fukuoka 819-0395, Japan
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