Effects of Hydrogen Passivation on Near-Infrared Photodetection of n-Type \beta-FeSi2/p-Type Si Heterojunction Photodiodes
スポンサーリンク
概要
- 論文の詳細を見る
Hydrogen passivation was applied to the initial epitaxial growth of n-type \beta-FeSi2 thin films on p-type Si(111) substrates. Such passivation was applied at different gas inflow H2/Ar ratios ranging from 0 to 1.0. The photodetection performance of the photodiode fabricated at the optimum ratio of 0.2 was markedly improved as compared with those of the other samples. The quantum efficiency and detectivity were 2.08% and 5.40\times 10^{9} cm\cdotHz1/2\cdotW-1, respectively. The enhanced photodetective performance should be mainly because dangling bonds that act as trap centers for photocarriers are effectively inactivated by the passivation.
- 2012-10-25
著者
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Yamashita Kyohei
Department Of Agricultural Chemistry Faculty Of Agriculture Tohoku University
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Yoshitake Tsuyoshi
Department of Applied Physics, Faculty of Engineering, Kyushu University
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Promros Nathaporn
Department of Applied Science for Electronics and Materials, Kyushu University, Kasuga, Fukuoka 816-8580, Japan
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Iwasaki Ryūhei
Department of Applied Science for Electronics and Materials, Kyushu University, Kasuga, Fukuoka 816-8580, Japan
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Promros Nathaporn
Department of Physics, King Mongkut's Institute of Technology Ladkrabang, Bangkok 10520, Thailand
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