Low Sheet Resistivity of Transparent Ga-Doped ZnO Film Grown by Atmospheric Spray Pyrolysis
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概要
- 論文の詳細を見る
Ga-doped ZnO film on polyethylene terephthalate film was successfully grown at 150 °C by conventional atmospheric spray pyrolysis using diethylzinc-based solution. The samples had an average optical transmittance of more than 80% and were strongly $a$-axis orientated according to the result of optical transmittance and X-ray diffraction analyses, respectively. The n-type Ga-doped ZnO films had a low sheet resistivity of 250 $\Omega$/$\square$ at an optimal Ga content of 1 at. % upon UV irradiation.
- 2011-08-25
著者
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Yoshino Kenji
Department Of Anatomy Nihon University School Of Dentistry At Matsudo
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Haga Ken-ichi
Research and Development Division, Tosoh Finechem Corporation, Shunan, Yamaguchi 746-0006, Japan
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Takemoto Yujin
Department of Electrical and Electronic Engineering, University of Miyazaki, Miyazaki 889-2192, Japan
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Toyota Kouji
Research and Development Division, Tosoh Finechem Corporation, Shunan, Yamaguchi 746-0006, Japan
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Inaba Koichiro
Research and Development Division, Tosoh Finechem Corporation, Shunan, Yamaguchi 746-0006, Japan
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Tokudome Koichi
Research and Development Division, Tosoh Finechem Corporation, Shunan, Yamaguchi 746-0006, Japan
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Oshima Minoru
Department of Electrical and Electronic Engineering, University of Miyazaki, 1-1 Gakuen Kibanadai-nishi, Miyazaki 889-2192, Japan
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Yoshino Kenji
Department of Electrical and Electronic Engineering, University of Miyazaki, Miyazaki 889-2192, Japan
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Tokudome Koichi
Research and Development Division, Tosoh Finechem Corporation, Shyunan, Yamaguchi 746-0006, Japan
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